Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 4, 042108- p.Article in journal (Refereed) Published
Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 degrees C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10(-4) Omega cm(2). Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 4, 042108- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67170DOI: 10.1063/1.3549198ISI: 000286676600025OAI: oai:DiVA.org:liu-67170DiVA: diva2:407781
Original Publication: Kristina Buchholt, R Ghandi, M Domeij, C-M Zetterling, Jun Lu, Per Eklund, Lars Hultman and Anita Lloyd Spetz, Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide, 2011, APPLIED PHYSICS LETTERS, (98), 4, 042108. http://dx.doi.org/10.1063/1.3549198 Copyright: American Institute of Physics http://www.aip.org/2011-04-012011-04-012016-08-31Bibliographically approved