Optical properties of functionalized GaN nanowires
2011 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 109, no 5, 053523- p.Article in journal (Refereed) Published
The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 109, no 5, 053523- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67158DOI: 10.1063/1.3552919ISI: 000288387900046OAI: oai:DiVA.org:liu-67158DiVA: diva2:407802
Chih-Wei Hsu, Abhijit Ganguly, Chin-Pei Chen, Chun-Chiang Kuo, Plamen Paskov, Per-Olof Holtz, Li-Chyong Chen and Kuei-Hsien Chen, Optical properties of functionalized GaN nanowires, 2011, JOURNAL OF APPLIED PHYSICS, (109), 5, 053523.
Copyright: American Institute of Physics