The water-forming reaction on Pd
1985 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 161, 77- p.Article in journal (Refereed) Published
The water-forming reaction on Pd has been studied on a Pd---SiO2---Si (Pd-MOS) structure in the temperature range 323–473 K. The reaction is found to be of the Langmuir-Hinshelwood type with the formation of OH beeing rate limiting. Since the Pd-MOS structure works as a sensitive hydrogen detector unique information on the behaviour of hydrogen during this catalytic reaction has been obtained. The reaction can be described in a model where the hydrogen atoms on the Pd surface have a large temperature activated lateral mobility and with no evidence of beeing in hot precursor states. At T = 473 K this means that for oxygen coverages 0.01 monolayers all hydrogen adsorbed will also react with oxygen. For smaller oxygen coverages unreacted hydrogen will not initially desorb towards the vacuum but towards the internal Pd surface of the Pd-MOS structure. Futhermore, hydrogen adsorption is blocked by adsorbed oxygen. The sticking coefficient for hydrogen on the bare Pd surface is, however, close to one and only weakly temperature dependent. An effect giving rise to a hysteresis in the work function versus oxygen coverage curve during oxygen adsorption - desorption is also discussed.
Place, publisher, year, edition, pages
1985. Vol. 161, 77- p.
IdentifiersURN: urn:nbn:se:liu:diva-67276DOI: 10.1016/0039-6028(85)90729-0OAI: oai:DiVA.org:liu-67276DiVA: diva2:409123