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Towards Optimisation of Epitaxially Grown Graphene Based Sensors for Highly Sensitive Gas Detection
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2010 (English)In: 2010 IEEE Sensors, Piscataway, NJ, United States: IEEE , 2010, 898-902 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxially grown single-layer and many-layer (10 atomic layers thick) resistive graphene devices were fabricated and compared for response towards NO2. Single-layer devices showed far greater sensitivity. The many-layer devices reduced in resistance on exposure to electron withdrawing NO2 demonstrating a majority hole carriers (p-type), whereas the single-layer device demonstrated an increase in resistance upon NO2 exposure demonstrating a majority of electron carriers (n-type). An n-p shift is observed for the single-layer device upon exposure to increasing concentrations of NO2. This shift is thought to be due to the reduction of electrons in the conduction band upon adsorption of electron-withdrawing NO2 making holes the majority carriers.

Place, publisher, year, edition, pages
Piscataway, NJ, United States: IEEE , 2010. 898-902 p.
Series
IEEE Sensors. Proceedings, ISSN 1930-0395
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-67319DOI: 10.1109/ICSENS.2010.5690879ISI: 000287982100200ISBN: 978-1-4244-8170-5 (print)ISBN: 978-1-4244-8168-2 (print)OAI: oai:DiVA.org:liu-67319DiVA: diva2:409380
Conference
Ninth IEEE Sensors Conference, Kona, Hawai USA, 1-4 November 2010
Available from: 2011-04-08 Created: 2011-04-08 Last updated: 2016-08-31Bibliographically approved

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Pearce, RuthIakimov, TihomirHultman, LarsLloyd Spetz, AnitaYakimova, Rositsa

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Pearce, RuthIakimov, TihomirHultman, LarsLloyd Spetz, AnitaYakimova, Rositsa
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Applied PhysicsThe Institute of TechnologySemiconductor MaterialsThin Film Physics
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