Towards Optimisation of Epitaxially Grown Graphene Based Sensors for Highly Sensitive Gas Detection
2010 (English)In: 2010 IEEE Sensors, Piscataway, NJ, United States: IEEE , 2010, 898-902 p.Conference paper (Refereed)
Epitaxially grown single-layer and many-layer (10 atomic layers thick) resistive graphene devices were fabricated and compared for response towards NO2. Single-layer devices showed far greater sensitivity. The many-layer devices reduced in resistance on exposure to electron withdrawing NO2 demonstrating a majority hole carriers (p-type), whereas the single-layer device demonstrated an increase in resistance upon NO2 exposure demonstrating a majority of electron carriers (n-type). An n-p shift is observed for the single-layer device upon exposure to increasing concentrations of NO2. This shift is thought to be due to the reduction of electrons in the conduction band upon adsorption of electron-withdrawing NO2 making holes the majority carriers.
Place, publisher, year, edition, pages
Piscataway, NJ, United States: IEEE , 2010. 898-902 p.
, IEEE Sensors. Proceedings, ISSN 1930-0395
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67319DOI: 10.1109/ICSENS.2010.5690879ISI: 000287982100200ISBN: 978-1-4244-8170-5 (print)ISBN: 978-1-4244-8168-2 (e-ISBN)OAI: oai:DiVA.org:liu-67319DiVA: diva2:409380
Ninth IEEE Sensors Conference, Kona, Hawai USA, 1-4 November 2010