NO dissociation on polycrystalline Pd studied with a Pd-metal-oxide-semiconductor (Pd-MOS) structure
1989 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 66, 1397- p.Article in journal (Refereed) Published
The dissociation probability of NO when adsorbed on polycrystalline Pd as a function of temperature (323–523 K) has been studied with a Pd‐metal‐oxide‐semiconductor (Pd‐MOS) structure. For comparison the same experiments were also carried out with O2, which adsorbs dissociatively in the whole temperature region, and with CO, which adsorbs molecularly. It was found that the Pd‐MOS structure can be used as a very sensitive sensor for NO dissociation and that dissociation of NO starts to be significant at temperatures around 400 K. The results are also compared with electron‐energy‐loss spectroscopy, ultraviolet photoemission spectroscopy, work‐function, and desorption studies.
Place, publisher, year, edition, pages
1989. Vol. 66, 1397- p.
IdentifiersURN: urn:nbn:se:liu:diva-67336DOI: 10.1063/1.344443OAI: oai:DiVA.org:liu-67336DiVA: diva2:409448