A hydrogen sensitive palladium metal-oxide-semiconductor device as sensor for dissociating NO in H2-atmospheres
1990 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 41, 705- p.Article in journal (Refereed) Published
A Pd-MOS structure can be used as a sensitive analytical tool in the study of dissociating oxygen containing molecules. Nitric oxide has been studied as a test case. Initially NO adsorbs very effectively and dissociatively on polycrystalline Pd at temperatures above 473 K. At this temperature H2O, N2O and N2 desorbs during an NO exposure in a hydrogen background. After such exposure the surface is probably left with only residual nitrogen atoms adsorbed on the surface. Below 390 K the dissociation probability is insignificant.
Place, publisher, year, edition, pages
1990. Vol. 41, 705- p.
IdentifiersURN: urn:nbn:se:liu:diva-67337DOI: 10.1016/0042-207X(90)90457-AOAI: oai:DiVA.org:liu-67337DiVA: diva2:409449