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A hydrogen sensitive palladium metal-oxide-semiconductor device as sensor for dissociating NO in H2-atmospheres
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
1990 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 41, 705- p.Article in journal (Refereed) Published
Abstract [en]

A Pd-MOS structure can be used as a sensitive analytical tool in the study of dissociating oxygen containing molecules. Nitric oxide has been studied as a test case. Initially NO adsorbs very effectively and dissociatively on polycrystalline Pd at temperatures above 473 K. At this temperature H2O, N2O and N2 desorbs during an NO exposure in a hydrogen background. After such exposure the surface is probably left with only residual nitrogen atoms adsorbed on the surface. Below 390 K the dissociation probability is insignificant.

Place, publisher, year, edition, pages
1990. Vol. 41, 705- p.
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Physical Sciences
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URN: urn:nbn:se:liu:diva-67337DOI: 10.1016/0042-207X(90)90457-AOAI: oai:DiVA.org:liu-67337DiVA: diva2:409449
Available from: 2011-04-08 Created: 2011-04-08 Last updated: 2017-12-11

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Dannetun, HelenLundström, Ingemar

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