liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
Centre Rech and Technology Energie, Sacavem.
Centre Rech and Technology Energie, Sacavem.
University of Nebraska.
Show others and affiliations
2011 (English)In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 519, no 9, 2838-2842 p.Article in journal (Refereed) Published
Abstract [en]

Spectroscopic ellipsometry from 0.73 to 4.75 eV was used to study the optical properties of epitaxial GaAs0.9-xNxSb0.1 layers with x=0.00, 0.65, 1.06, 1.45 and 1.90%. The ellipsometric experimental spectra were fitted using a multilayer model employing the model dielectric function to describe the GaAs0.9-xNxSb0.1 optical response. We have identified the Gamma-point E-0, E+, and E-# transitions of GaAs0.9-xNxSb0.1 and have determined the effect of nitrogen on the respective transition energies. We have demonstrated that a lower N content can provide an equal E+-E-0 energy splitting for GaAs0.9-xNxSb0.1 with respect to GaAs1-xNx.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND , 2011. Vol. 519, no 9, 2838-2842 p.
Keyword [en]
Dielectric function, III-V semiconductors, Optical properties
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-67704DOI: 10.1016/j.tsf.2010.12.056ISI: 000289174200058OAI: diva2:412603
Available from: 2011-04-26 Created: 2011-04-26 Last updated: 2011-04-26

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Darakchieva, Vanya
By organisation
Semiconductor MaterialsThe Institute of Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 54 hits
ReferencesLink to record
Permanent link

Direct link