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Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
Centre Rech and Technology Energie, Sacavem.
Centre Rech and Technology Energie, Sacavem.
University of Nebraska.
CNRS.
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2011 (English)In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 519, no 9, 2838-2842 p.Article in journal (Refereed) Published
Abstract [en]

Spectroscopic ellipsometry from 0.73 to 4.75 eV was used to study the optical properties of epitaxial GaAs0.9-xNxSb0.1 layers with x=0.00, 0.65, 1.06, 1.45 and 1.90%. The ellipsometric experimental spectra were fitted using a multilayer model employing the model dielectric function to describe the GaAs0.9-xNxSb0.1 optical response. We have identified the Gamma-point E-0, E+, and E-# transitions of GaAs0.9-xNxSb0.1 and have determined the effect of nitrogen on the respective transition energies. We have demonstrated that a lower N content can provide an equal E+-E-0 energy splitting for GaAs0.9-xNxSb0.1 with respect to GaAs1-xNx.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND , 2011. Vol. 519, no 9, 2838-2842 p.
Keyword [en]
Dielectric function, III-V semiconductors, Optical properties
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-67704DOI: 10.1016/j.tsf.2010.12.056ISI: 000289174200058OAI: oai:DiVA.org:liu-67704DiVA: diva2:412603
Available from: 2011-04-26 Created: 2011-04-26 Last updated: 2011-04-26

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Darakchieva, Vanya

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Citation style
  • apa
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  • Other style
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  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
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  • text
  • asciidoc
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