Effect of postgrowth hydrogen treatment on defects in GaNP
2011 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 98, no 14, 141920- p.Article in journal (Refereed) Published
Effect of postgrowth hydrogen treatment on defects and their role in carrier recombination in GaNP alloys is examined by photoluminescence (PL) and optically detected magnetic resonance. We present direct experimental evidence for effective activation of several defects by low-energy subthreshold hydrogen treatment (andlt;= 100 eV H ions). Among them, two defect complexes are identified to contain a Ga interstitial. Possible mechanisms for the H-induced defect activation and creation are discussed. Carrier recombination via these defects is shown to efficiently compete with the near band-edge PL, explaining the observed degraded optical quality of the alloys after the H treatment.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 14, 141920- p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67843DOI: 10.1063/1.3576920ISI: 000289297800035OAI: oai:DiVA.org:liu-67843DiVA: diva2:413582
Daniel Dagnelund, Xingjun Wang, C W Tu, A Polimeni, M Capizzi, Weimin Chen and Irina Buyanova, Effect of postgrowth hydrogen treatment on defects in GaNP, 2011, APPLIED PHYSICS LETTERS, (98), 14, 141920.
Copyright: American Institute of Physics