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Composition tunable Al1-xInxN nanorod arrays grown by ultra-high-vacuum magnetron sputter epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-3203-7935
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
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2011 (English)Manuscript (preprint) (Other academic)
Abstract [en]

Self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration, 0.10 ≤ x ≤ 0.32 have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layers assistance. The formation of nanorods was very sensitive to the applied seed layer. Without proper seed layer assistance a continuous Al1-xInxN film was grown. The nanorods exhibit hexagonal crosssections with preferential growth along the c axis. A coaxial rod structure with higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive xray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ~5.46 eV, which was accompanied by a strong defectrelated emission at ~ 3.38 eV.

Place, publisher, year, edition, pages
2011. Vol. 5, no 2, 50-52 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-67983OAI: oai:DiVA.org:liu-67983DiVA: diva2:414785
Available from: 2011-05-04 Created: 2011-05-04 Last updated: 2016-08-31Bibliographically approved
In thesis
1. Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
Open this publication in new window or tab >>Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
2011 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

This Licentiate Thesis covers experimental and theoretical investigations of the bulk plasmon response to different compositions and strain states of group III-nitride materials. Investigated materials were grown using magnetron sputtering epitaxy and metal organic chemical vapour deposition and studied by Rutherford backscattering spectrometry, X-ray diffraction, electron microscopy and electron energy loss spectroscopy (EELS).

It is shown that low-loss EELS is a powerful method for a fast compositional determination in AlxIn1-xN system. The bulk plasmon energy of the investigated material system follows a linear relation with respect to lattice parameter and composition in unstrained layers.

Furthermore, the effect of strain on the bulk plasmon peak position has been investigated by using low-loss EELS in group III-nitrides. We experimentally determine the AlN bulk plasmon peak shift of 0.156 eV per 1% volume change. The AlN peak shift was corroborated by full potential calculations (Wein2k), which reveal that the bulk plasmon peak position of III-nitrides varies near linearly with unit cell volume variations.

Finally, self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputtering epitaxy with Ti0.21Zr0.79N or VN seed layer assistance. The nanorods exhibit hexagonal cross-sections with preferential growth along the Al1-xInxN c-axis. A coaxial rod structure with higher In concentration in the core was observed by scanning transmission electron microscopy in combination with low-loss EELS.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 47 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1487
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-67985 (URN)LIU-TEK-LIC-2011:26 (Local ID)978-91-7393-161-8 (ISBN)LIU-TEK-LIC-2011:26 (Archive number)LIU-TEK-LIC-2011:26 (OAI)
Presentation
2011-06-01, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-05-04 Created: 2011-05-04 Last updated: 2016-08-31Bibliographically approved

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Hsiao, Ching-LienPalisaitis, JustinasPersson, Per O.Å.Sandström, PerHoltz, Per-OlofHultman, LarsBirch, Jens

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