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Post fabrication annealing effects on electrical and optical characteristics of n-ZnO nanorods/p-Si heterojunction diodes
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
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(English)Manuscript (preprint) (Other academic)
Abstract [en]

Annealing effects on optical and electrical properties of n-ZnO/p-Si heterojunction diodes are studied. ZnO nanorods are grown on p-Si substrate by aquous chemical growth technique. As grown samples were annealed at 400 and 600 oC in air, oxygen and nitrogen ambient. Structural, optical and electrical characteristics are studied by Scanning Electron Microscopy (SEM), Photoluminescence (PL), Current–Voltage (I-V) and Capacitance-Voltage (CV) measurements. Well aligned hexagonal–shaped vertical nanorods are revealed in SEM. PL spectra indicated higher ultraviolet to visible emission ratio with a strong peak ofnear band edge emission (NBE) and weak broad deep-level emissions (DLE). For device fabrication Al/Pt non-alloyed ohmic contacts have been evaporated. I-V characteristics indicate that annealing in air and oxygen resulted in better rectifying behavior as well as decrease in reverse leakage current. An improvement in PL intensity has been shown by the samples annealed at 400 oC.

Keyword [en]
heterojunction diodes, ZnO on Si, electrical properties, ZnO nanorods
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-68074OAI: oai:DiVA.org:liu-68074DiVA: diva2:416040
Available from: 2011-05-10 Created: 2011-05-10 Last updated: 2014-10-08Bibliographically approved
In thesis
1. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Open this publication in new window or tab >>Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
2011 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. For producing high quality devices, thermal treatment always plays an important role in improving material structural quality which results in improved electrical and optical properties. Similarly good quality of metal–semiconductor interface, sensitive to the semiconductor surface, is always required.

In this thesis we report the study of the interface states density for Pd/Ti/Au Schottky contacts on the free-standing GaN and post fabrication annealing effects on the electrical and optical properties of ZnO/Si hetero-junction diodes. The determination of interface states density (NSS) distribution within the band gap would help in understanding the processes dominating the electrical behavior of the metal–semiconductor contacts. The study of annealing effects on photoluminescence, rectification and ideality factor of ZnO/Si hetero-junction diodes are helpful for optimization and realization to build up the confidence to commercialize devices for lightening. A comparison of device performance between the physical simulations and measured device characteristics has also been carried out for pd/ZnO Schottky diode to understand the behavior of the devices.

This research work not only teaches the effective way of device fabrication, but also obtains some beneficial results in aspects of their optical and electrical properties, which builds theoretical and experimental foundation for much better and broader applications of wide band gap semiconductor devices.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 28 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1492
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-68076 (URN)LIU-TEK-LIC-2011: 31 (Local ID)978-91-7393-148-9 (ISBN)LIU-TEK-LIC-2011: 31 (Archive number)LIU-TEK-LIC-2011: 31 (OAI)
Supervisors
Available from: 2011-05-10 Created: 2011-05-10 Last updated: 2011-05-10Bibliographically approved

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Muniza Faraz, SadiaAlvi, Naveed ul HassanHenry, ArneNur, OmerWillander, MagnusWahab, Qama ul

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Muniza Faraz, SadiaAlvi, Naveed ul HassanHenry, ArneNur, OmerWillander, MagnusWahab, Qama ul
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Department of Physics, Chemistry and BiologyThe Institute of TechnologyDepartment of Science and TechnologySemiconductor Materials
Natural Sciences

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