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Modeling and simulations of Pd/n-ZnO Schottky diode and its comparison with measurements
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Department of Physics, Islamia University of Bahawalpur, Pakistan.
Department of Physics, Islamia University of Bahawalpur, Pakistan.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-6235-7038
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2009 (English)In: Advanced Materials Research, ISSN 1662-8985, Vol. 79-82, 1317-1320 p.Article in journal (Refereed) Published
Abstract [en]

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitancevoltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Place, publisher, year, edition, pages
2009. Vol. 79-82, 1317-1320 p.
Keyword [en]
ZnO, Schottky contact, Barrier height
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-68075DOI: 10.4028/www.scientific.net/AMR.79-82.1317OAI: oai:DiVA.org:liu-68075DiVA: diva2:416042
Available from: 2011-05-10 Created: 2011-05-10 Last updated: 2014-01-15Bibliographically approved
In thesis
1. Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
Open this publication in new window or tab >>Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices
2011 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Wide band gap semiconductors, Zinc Oxide (ZnO), Gallium Nitride (GaN) and Silicon Carbide (SiC) have been emerged to be the most promising semiconductors for future applications in electronic, optoelectronic and power devices. They offer incredible advantages in terms of their optical properties, DC and microwave frequencies power handling capability, piezoelectric properties in building electromechanical coupled sensors and transducers, biosensors and bright light emission. For producing high quality devices, thermal treatment always plays an important role in improving material structural quality which results in improved electrical and optical properties. Similarly good quality of metal–semiconductor interface, sensitive to the semiconductor surface, is always required.

In this thesis we report the study of the interface states density for Pd/Ti/Au Schottky contacts on the free-standing GaN and post fabrication annealing effects on the electrical and optical properties of ZnO/Si hetero-junction diodes. The determination of interface states density (NSS) distribution within the band gap would help in understanding the processes dominating the electrical behavior of the metal–semiconductor contacts. The study of annealing effects on photoluminescence, rectification and ideality factor of ZnO/Si hetero-junction diodes are helpful for optimization and realization to build up the confidence to commercialize devices for lightening. A comparison of device performance between the physical simulations and measured device characteristics has also been carried out for pd/ZnO Schottky diode to understand the behavior of the devices.

This research work not only teaches the effective way of device fabrication, but also obtains some beneficial results in aspects of their optical and electrical properties, which builds theoretical and experimental foundation for much better and broader applications of wide band gap semiconductor devices.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 28 p.
Series
Linköping Studies in Science and Technology. Thesis, ISSN 0280-7971 ; 1492
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-68076 (URN)LIU-TEK-LIC-2011: 31 (Local ID)978-91-7393-148-9 (ISBN)LIU-TEK-LIC-2011: 31 (Archive number)LIU-TEK-LIC-2011: 31 (OAI)
Supervisors
Available from: 2011-05-10 Created: 2011-05-10 Last updated: 2011-05-10Bibliographically approved

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Muniza Faraz, SadiaWillander, MagnusWahab, Qamar ul

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