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Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness
Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala .
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2011 (English)In: ELECTROCHEMICAL AND SOLID STATE LETTERS, ISSN 1099-0062, Vol. 14, no 7, H268-H270 p.Article in journal (Refereed) Published
Abstract [en]

This letter presents a proof-of-concept process for tunable, self-limiting growth of ultrathin epitaxial NiSi2 films on Si (100). The process starts with metal sputter-deposition, followed by wet etching and then silicidation. By ionizing a fraction of the sputtered Ni atoms and biasing the Si substrate, the amount of Ni atoms incorporated in the substrate after wet etching can be controlled. As a result, the thickness of the NiSi2 films is increased from 4.7 to 7.2 nm by changing the nominal substrate bias from 0 to 600 V. The NiSi2 films are characterized by a specific resistivity around 50 mu Omega cm.

Place, publisher, year, edition, pages
Electrochemical Society and Institute of Electronics Engineers , 2011. Vol. 14, no 7, H268-H270 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-68347DOI: 10.1149/1.3580618ISI: 000290276400013OAI: oai:DiVA.org:liu-68347DiVA: diva2:418139
Available from: 2011-05-20 Created: 2011-05-20 Last updated: 2016-08-31

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Lu, JunHultman, Lars

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