A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
2011 (English)In: IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, Vol. 32, no 6, 788-790 p.Article in journal (Refereed) Published
SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.
Place, publisher, year, edition, pages
IEEE Institute of Electrical and Electronics , 2011. Vol. 32, no 6, 788-790 p.
Interdigitated, load modulation, power amplifiers (PAs), Schottky diodes, self-aligned, SiC, tuning range, varactors
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-68914DOI: 10.1109/LED.2011.2131117ISI: 000290994800030OAI: oai:DiVA.org:liu-68914DiVA: diva2:421953