Strong room-temperature optical and spin polarization in InAs/GaAs quantum dot structures
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 20, 203110- p.Article in journal (Refereed) Published
Room-temperature optical and spin polarization up to 35% is reported in InAs/GaAs quantum dots in zero magnetic field under optical spin injection using continuous-wave optical orientation spectroscopy. The observed strong spin polarization is suggested to be facilitated by a shortened trion lifetime, which constrains electron spin relaxation. Our finding provides experimental demonstration of the highly anticipated capability of semiconductor quantum dots as highly polarized spin/light sources and efficient spin detectors, with efficiency greater than 35% in the studied quantum dots.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 20, 203110- p.
National CategoryCondensed Matter Physics Telecommunications
IdentifiersURN: urn:nbn:se:liu:diva-68961DOI: 10.1063/1.3592572ISI: 000290812100058OAI: oai:DiVA.org:liu-68961DiVA: diva2:422677
Jan Beyer, Irina A Buyanova, S. Suraprapapich, C. W. Tu and Weimin Chen, Strong room-temperature optical and spin polarization in InAs/GaAs quantum dot structures, 2011, Applied Physics Letters, (98), 20, 203110.
Copyright: American Institute of Physics