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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
National Physics Lab, Teddington, England .
National Physics Lab, Teddington, England .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Chalmers.
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2011 (English)In: PHYSICAL REVIEW B, ISSN 1098-0121, Vol. 83, no 23, 233402- p.Article in journal (Refereed) Published
Abstract [en]

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 83, no 23, 233402- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-69165DOI: 10.1103/PhysRevB.83.233402ISI: 000291310800001OAI: oai:DiVA.org:liu-69165DiVA: diva2:424345
Note
Original Publication: T J B M Janssen, A Tzalenchuk, Rositsa Yakimova, S Kubatkin, S Lara-Avila, S Kopylov and V I Falko, Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene, 2011, PHYSICAL REVIEW B, (83), 23, 233402. http://dx.doi.org/10.1103/PhysRevB.83.233402 Copyright: American Physical Society http://www.aps.org/ Available from: 2011-06-17 Created: 2011-06-17 Last updated: 2011-06-21

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