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Ultrafast carrier dynamics of near-band-edge emission in single-crystal ZnO nanorods
Jiangsu University.
Nanyang Technology University.
NE Dianli University.
NE Normal University.
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2011 (English)In: Materials research bulletin, ISSN 0025-5408, E-ISSN 1873-4227, Vol. 46, no 6, 937-940 p.Article in journal (Refereed) Published
Abstract [en]

We report on rational synthesis and optical characteristics of highly crystallined ZnO nanorods which were grown by a facile chemical vapor transport method. Temperature-dependent photoluminescence spectra of as-fabricated ZnO nanorods are dominated by near-band-edge emission with a characteristic fine structure due to high crystallinity. Furthermore, the recombination emission involving carrier dynamics of near-band-edge emission in ZnO nanorods was systematically investigated by temperature-dependent time-resolved photoluminescence spectroscopy. Recombination peaks pertaining to the exciton emissions are monitored and resolved in both temporal and spatial regimes.

Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2011. Vol. 46, no 6, 937-940 p.
Keyword [en]
Semiconductors; Vapor deposition; Optical properties
National Category
Medical and Health Sciences
Identifiers
URN: urn:nbn:se:liu:diva-69896DOI: 10.1016/j.materresbull.2011.02.007ISI: 000291373500026OAI: oai:DiVA.org:liu-69896DiVA: diva2:433298
Available from: 2011-08-09 Created: 2011-08-08 Last updated: 2017-12-08

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Yang, Li-Li

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