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Defects at nitrogen site in electron-irradiated AlN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Hungarian Academy of Science.
Budapest University Technology and Economics.
University Erlangen Nurnberg.
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 24, 242116- p.Article in journal (Refereed) Published
Abstract [en]

In high resistance AlN irradiated with 2 MeV electrons, an electron paramagnetic resonance (EPR) spectrum, labeled EI-1, with an electron spin S=1/2 and a clear hyperfine (hf) structure was observed. The hf structure was shown to be due the interaction between the electron spin and the nuclear spins of four (27)A nuclei with the hf splitting varying between similar to 6.0 and similar to 7.2 mT. Comparing the hf data obtained from EPR and ab initio supercell calculations we suggest the EI-1 defect to be the best candidate for the neutral nitrogen vacancy in AlN.

Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 24, 242116- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-69860DOI: 10.1063/1.3600638ISI: 000291803600050OAI: oai:DiVA.org:liu-69860DiVA: diva2:433425
Note
Original Publication: Nguyen Son Tien, A. Gali, A. Szabo, M. Bickermann, T. Ohshima, J. Isoya and Erik Janzén, Defects at nitrogen site in electron-irradiated AlN, 2011, Applied Physics Letters, (98), 24, 242116. http://dx.doi.org/10.1063/1.3600638 Copyright: American Institute of Physics http://www.aip.org/ Available from: 2011-08-10 Created: 2011-08-08 Last updated: 2017-12-08

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