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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
Fudan University.
Fudan University.
Fudan University.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 58, no 7, 1898-1906 p.Article in journal (Refereed) Published
Abstract [en]

This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L(G) = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

Place, publisher, year, edition, pages
IEEE Institute of Electrical and Electronics , 2011. Vol. 58, no 7, 1898-1906 p.
Keyword [en]
Contacts; MOSFETs; silicides
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-69822DOI: 10.1109/TED.2011.2145381ISI: 000291952900011OAI: diva2:433527
Available from: 2011-08-10 Created: 2011-08-08 Last updated: 2016-08-31

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