Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection
2011 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 155, no 2, 451-455 p.Article in journal (Refereed) Published
Epitaxially grown single layer and multi layer graphene on SiC devices were fabricated and compared for response towards NO(2). Due to electron donation from SiC:, single layer graphene is n-type with a very low carrier concentration. The choice of substrate is demonstrated to enable tailoring of the electronic properties of graphene, with a SiC substrate realising simple resistive devices tuned for extremely sensitive NO(2) detection. The gas exposed uppermost layer of the multi layer device is screened from the SiC by the intermediate layers leading to a p-type nature with a higher concentration of charge carriers and therefore, a lower gas response. The single layer graphene device is thought to undergo an n-p transition upon exposure to increasing concentrations of NO(2) indicated by a change in response direction. This transition is likely to be due to the transfer of electrons to NO(2) making holes the majority carriers. (C) 2011 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
Elsevier Science B.V., Amsterdam. , 2011. Vol. 155, no 2, 451-455 p.
Epitaxial graphene; Gas sensor; NO(2); SiC
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-69793DOI: 10.1016/j.snb.2010.12.046ISI: 000291774100003OAI: oai:DiVA.org:liu-69793DiVA: diva2:433578
Original Publication: Ruth Pearce, Tihomir Iakimov, Mike Andersson, Lars Hultman, Anita Lloyd Spetz and Rositsa Yakimova, Epitaxially grown graphene based gas sensors for ultra sensitive NO(2) detection, 2011, Sensors and actuators. B, Chemical, (155), 2, 451-455. http://dx.doi.org/10.1016/j.snb.2010.12.046 Copyright: Elsevier Science B.V., Amsterdam. http://www.elsevier.com/2011-08-102011-08-082014-04-07