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Engineering and metrology of epitaxial graphene
National Physics Lab, Teddington.
Chalmers.
Chalmers.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 151, no 16, 1094-1099 p.Article in journal (Refereed) Published
Abstract [en]

ere we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide.

Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 151, no 16, 1094-1099 p.
Keyword [en]
Graphene, Quantum Hall effect, Photochemical gate, Metrology
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-70108DOI: 10.1016/j.ssc.2011.05.020ISI: 000293423700009OAI: oai:DiVA.org:liu-70108DiVA: diva2:435545
Available from: 2011-08-19 Created: 2011-08-19 Last updated: 2017-12-08

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Syväjärvi, MikaelYakimova, Rositsa

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