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Epitaxial growth and electrical transport properties of Cr(2)GeC thin films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
University of Poitiers.
University of Poitiers.
University of Poitiers.
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 7, 075424- p.Article in journal (Refereed) Published
Abstract [en]

Cr(2)GeC thin films were grown by magnetron sputtering from elemental targets. Phase-pure Cr(2)GeC was grown directly onto Al(2)O(3)(0001) at temperatures of 700-800 degrees C. These films have an epitaxial component with the well-known epitaxial relationship Cr(2)GeC(0001)//Al(2)O(3)(0001) and Cr(2)GeC(11andlt;(2) overbarandgt;0)//Al(2)O(3)(1andlt;(1)over barandgt;00) or Cr(2)GeC(11andlt;(2) over barandgt;0)//Al(2)O(3)(andlt;(1) over barandgt;2andlt;(1) over barandgt;0). There is also a large secondary grain population with (10andlt;(1)overbarandgt;3) orientation. Deposition onto Al(2)O(3)(0001) with a TiN(111) seed layer and onto MgO(111) yielded growth of globally epitaxial Cr(2)GeC(0001) with a virtually negligible (10andlt;(1) over barandgt;3) contribution. In contrast to the films deposited at 700-800 degrees C, the ones grown at 500-600 degrees C are polycrystalline Cr(2)GeC with (10andlt;(1) over barandgt;0)-dominated orientation; they also exhibit surface segregations of Ge as a consequence of fast Ge diffusion rates along the basal planes. The room-temperature resistivity of our samples is 53-66 mu Omega cm. Temperature-dependent resistivity measurements from 15-295 K show that electron-phonon coupling is important and likely anisotropic, which emphasizes that the electrical transport properties cannot be understood in terms of ground state electronic structure calculations only.

Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 84, no 7, 075424- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-70102DOI: 10.1103/PhysRevB.84.075424ISI: 000293555100017OAI: oai:DiVA.org:liu-70102DiVA: diva2:435550
Note
Original Publication: Per Eklund, Matthieu Bugnet, Vincent Mauchamp, Sylvain Dubois, Christophe Tromas, Jens Jensen, Luc Piraux, Loiek Gence, Michel Jaouen and Thierry Cabioch, Epitaxial growth and electrical transport properties of Cr(2)GeC thin films, 2011, Physical Review B. Condensed Matter and Materials Physics, (84), 7, 075424. http://dx.doi.org/10.1103/PhysRevB.84.075424 Copyright: American Physical Society http://www.aps.org/ Available from: 2011-08-19 Created: 2011-08-19 Last updated: 2017-12-08

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