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Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y)
Chinese Academy of Science.
Uppsala University.
Fudan University.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 8, 1029-1031 p.Article in journal (Refereed) Published
Abstract [en]

The Schottky barrier height (SBH) of an ultrathin epitaxial NiSi(2-y) film grown on Si(100) is modified significantly by means of dopant segregation (DS). The DS process begins with the NiSi(2-y) formation and is followed by dopant implantation and drive-in annealing. The rapid lattice restoration and superior morphological stability upon heat treatment up to 800 degrees C allow the epitaxial NiSi(2-y) film to take full advantage of the DS process. For drive-in annealing below 750 degrees C, the effective SBH is altered to similar to 0.9-1 eV for both electrons and holes by B-DS and As-DS, respectively, without deteriorating the integrity of the NiSi(2-y) film.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2011. Vol. 32, no 8, 1029-1031 p.
Keyword [en]
Dopant segregation (DS), epitaxy, morphological stability, NiSi(2), Schottky barrier height (SBH), ultrathin
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-70223DOI: 10.1109/LED.2011.2157301ISI: 000293710400012OAI: diva2:436997
©2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. Jun Luo, Xindong Gao, Zhi-Jun Qiu, Jun Lu, Dongping Wu, Chao Zhao, Junfeng Li, Dapeng Chen, Lars Hultman and Shi-Li Zhang, Thermal Stability and Dopant Segregation for Schottky Diodes With Ultrathin Epitaxial NiSi(2-y), 2011, IEEE Electron Device Letters, (32), 8, 1029-1031. Available from: 2011-08-26 Created: 2011-08-26 Last updated: 2011-09-06

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