Deep levels in iron doped n- and p-type 4H-SiC
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, 123701-1-123701-5 p.Article in journal (Refereed) Published
Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (EC 0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (EV + 0.98 eV and EV + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority capture process for all the three Fe-related peaks is multi-phonon assisted. Similar defect behavior in Si indicates that the observed DLTS peaks are likely related to Fe and Fe-B pairs.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2011. Vol. 110, 123701-1-123701-5 p.
crystal microstructure, vacancies, defects, radiation effects, semiconductors
National CategoryNatural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-70352DOI: 10.1063/1.3669401ISI: 000298639800044OAI: oai:DiVA.org:liu-70352DiVA: diva2:438431
funding agencies|Swedish Research Council (VR)||Swedish Energy Agency||2011-09-022011-09-022015-09-22Bibliographically approved