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Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)(n+1)GeC(n) thin films
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 5, 053516Article in journal (Refereed) Published
Abstract [en]

Phase-pure epitaxial thin films of (Ti,V)(2)GeC have been grown onto Al(2)O(3)(0001) substrates via magnetron sputtering. The c lattice parameter is determined to be 12.59 A, corresponding to a 50/50 Ti/V solid solution according to Vegards law, and the overall (Ti,V): Ge: C composition is 2:1:1 as determined by elastic recoil detection analysis. The minimum temperature for the growth of (Ti,V)(2)GeC is 700 degrees C, which is the same as for Ti(2)GeC but higher than that required for V(2)GeC (450 degrees C). Reduced Ge content yields films containing (Ti,V)(3)GeC(2) and (Ti,V)(4)GeC(3). These results show that the previously unknown phases V(3)GeC(2) and V(4)GeC(3) can be stabilized through alloying with Ti. For films grown on 4H-SiC(0001), (Ti,V)(3)GeC(2) was observed as the dominant phase, showing that the nucleation and growth of (Ti,V)(n+1)GeC(n) is affected by the choice of substrate; the proposed underlying physical mechanism is that differences in the local substrate temperature enhance surface diffusion and facilitate the growth of the higher-order phase (Ti,V)(3)GeC(2) compared to (Ti,V)(2)GeC.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2011. Vol. 110, no 5, 053516
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-71221DOI: 10.1063/1.3631087ISI: 000294968600055OAI: diva2:446346

The status of this article was previously Manuscript and the original title was (Ti, V)n+1GeCn thin films.

Available from: 2011-10-07 Created: 2011-10-07 Last updated: 2016-08-31
In thesis
1. Nanostructured materials for gas sensing applications
Open this publication in new window or tab >>Nanostructured materials for gas sensing applications
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 61 p.
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
National Category
Natural Sciences
urn:nbn:se:liu:diva-69641 (URN)978‐91‐7393‐140‐3 (ISBN)
Public defence
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Available from: 2011-07-08 Created: 2011-07-08 Last updated: 2016-08-31Bibliographically approved

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