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Process stabilization and enhancement of deposition rate during reactive high power pulsed magnetron sputtering of zirconium oxide
Institute of Physics (IA), RWTH Aachen University, Germany.ORCID iD: 0000-0003-2864-9509
Aachen University, Germany.
Aachen University, Germany.
Aachen University, Germany.
2008 (English)In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 202, no 20, 5033-5035 p.Article in journal (Refereed) Published
Abstract [en]

Reactive high power pulsed magnetron sputtering (HPPMS) of zirconium oxide exhibits a stable and hysteresis-free transition zone, as opposed to reactive direct current magnetron sputtering (dcMS). The stabilization of the transition zone in HPPMS facilitates the growth of transparent zirconium oxide films at lower target coverage, in comparison to dcMS. The lower target coverage, in turn, allows for film deposition rates up to 2 times higher than those achieved by dcMS. The mechanisms which lead to the process stabilization in reactive HPPMS are discussed.

Place, publisher, year, edition, pages
Elsevier , 2008. Vol. 202, no 20, 5033-5035 p.
Keyword [en]
HPPMS HIPIMS; reactive deposition; deposition rate
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-71482DOI: 10.1016/j.surfcoat.2008.05.009ISI: 000258048400022OAI: oai:DiVA.org:liu-71482DiVA: diva2:450209
Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2017-12-08

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Sarakinos, Kostas

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