Ionized physical vapor deposited Al(2)O(3) films: Does subplantation favor formation of alpha-Al(2)O(3)?
2010 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 4, no 7, 154-156 p.Article in journal (Refereed) Published
The broad energy distributions of the condensing particles typically encountered in ion assisted vapor deposition techniques are often a drawback when attempting to understand the effect of the energetic bombardment on the film properties. In the current study, a monoenergetic Al beam generated by a filtered cathodic arc discharge is employed for the deposition of alumina (Al(2)O(3)) films at well defined AI ion energies between 4 eV and 200 eV at a substrate temperature of 720 degrees C. Structural analysis shows that Al energies of 40 eV or larger favor the formation of the thermodynamically stable zeta-Al(2)O(3) phase at the expense of other metastable Al(2)O(3) polymorphs. The well defined ion energies are used as input for Monte-Carlo based simulations of the ion surface interactions. The results of these simulations reveal that the increase of the Al(+) ion energy leads to an increase in the fraction of ions subplanted into the growing film. These findings underline the previously not considered role of subsurface processes on the phase formation of ionized physical vapor deposited Al(2)O(3) films.
Place, publisher, year, edition, pages
Wiley-VCH Verlag Berlin , 2010. Vol. 4, no 7, 154-156 p.
alumina; Al(2)O(3); vapor deposition
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71475DOI: 10.1002/pssr.201004133ISI: 000280634500007OAI: oai:DiVA.org:liu-71475DiVA: diva2:450217