Low temperature synthesis of alpha-Al(2)O(3) films by high-power plasma-assisted chemical vapour deposition
2010 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 43, no 32, 325202- p.Article in journal (Refereed) Published
In this study, we deposit Al(2)O(3) films using plasma-assisted chemical vapour deposition (PACVD) in an Ar-H(2)-O(2)-AlCl(3) atmosphere. A novel generator delivering approximately 4 times larger power densities than those conventionally employed in PACVD enabling efficient AlCl(3) dissociation in the gas phase as well as a more intense energetic bombardment of the growing film is utilized. We demonstrate that these deposition conditions allow for the growth of dense alpha-Al(2)O(3) films with negligible Cl incorporation and elastic properties similar to those of the bulk alpha-Al(2)O(3) at a temperature of 560 +/- 10 degrees C.
Place, publisher, year, edition, pages
Institute of Physics , 2010. Vol. 43, no 32, 325202- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71474DOI: 10.1088/0022-3727/43/32/325202ISI: 000280483800010OAI: oai:DiVA.org:liu-71474DiVA: diva2:450218