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Low temperature synthesis of alpha-Al(2)O(3) films by high-power plasma-assisted chemical vapour deposition
RWTH Aachen University, Germany.
Materials Chemistry, RWTH Aachen University, Germany.ORCID iD: 0000-0003-2864-9509
RWTH Aachen University, Germany.
RWTH Aachen University, Germany.
2010 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 43, no 32, 325202- p.Article in journal (Refereed) Published
Abstract [en]

In this study, we deposit Al(2)O(3) films using plasma-assisted chemical vapour deposition (PACVD) in an Ar-H(2)-O(2)-AlCl(3) atmosphere. A novel generator delivering approximately 4 times larger power densities than those conventionally employed in PACVD enabling efficient AlCl(3) dissociation in the gas phase as well as a more intense energetic bombardment of the growing film is utilized. We demonstrate that these deposition conditions allow for the growth of dense alpha-Al(2)O(3) films with negligible Cl incorporation and elastic properties similar to those of the bulk alpha-Al(2)O(3) at a temperature of 560 +/- 10 degrees C.

Place, publisher, year, edition, pages
Institute of Physics , 2010. Vol. 43, no 32, 325202- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-71474DOI: 10.1088/0022-3727/43/32/325202ISI: 000280483800010OAI: oai:DiVA.org:liu-71474DiVA: diva2:450218
Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2017-12-08

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Sarakinos, Kostas

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