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The role of backscattered energetic atoms in film growth in reactive magnetron sputtering of chromium nitride
Institute of Physics (IA), Aachen University of Technology, Germany.ORCID iD: 0000-0003-2864-9509
Aachen University of Technology, Germany.
Aachen University of Technology, Germany.
Aachen University of Technology, Germany.
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2007 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 40, no 3, 778-785 p.Article in journal (Refereed) Published
Abstract [en]

In this work the impact of backscattered energetic atoms on film growth in reactive sputtering of CrNx (x less than= 1) is manifested. We use film and plasma characterization techniques, as well as simulations in order to study the dynamics of the target-discharge-film interactions. The results show that the primary bombarding species of the growing film are N-2(+) plasma ions, which are neutralized and backscattered by the target in the form of atomic N. It is shown that the backscattered N atoms have energies which are significantly higher than those of other bombarding species, i.e. the backscattered Ar atoms, the sputtered atoms and the plasma ions. Moreover, it is found that CrN films exhibit compressive stresses of 2.6 GPa and a density close to the bulk value. We attribute these properties to the bombardment by backscattered energetic atoms, in particular N. Pure Cr films are also studied for reference.

Place, publisher, year, edition, pages
Institute of Physics , 2007. Vol. 40, no 3, 778-785 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-71503DOI: 10.1088/0022-3727/40/3/014ISI: 000243907700023OAI: diva2:450296
Available from: 2011-10-20 Created: 2011-10-20 Last updated: 2014-10-29

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Sarakinos, Kostas
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