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Carbon-tuned cathodoluminescence of semi-insulating GaN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 208, no 9, 2182-2185 p.Article in journal (Refereed) Published
Abstract [en]

We report on the cathodoluminescence (CL) of nominally undoped semi-insulating GaN layers grown by hot-wall metal-organic chemical vapor deposition (MOCVD) at a threefold increase of the growth rate limited by the TMGa flow. The growth kinetics is such, that C is the only background impurity in the layers with controllably increasing concentration from 5 x 10(16) to 6 x 10(17) cm(-3), while other background impurities, H. O and Si, are essentially at the SIMS detection levels. The hot-wall MOCVD is not an ordinary approach to GaN growth process and this study corroborates a more perceptive outlook on the C incorporation in GaN and any potential C-incorporation-mediated luminescence, including the observed here blue luminescence (BL) at similar to 417 nm, and the yellow luminescence (YL) with shifting peak position towards shorter wavelengths, similar to 555-543-525 nm.

Place, publisher, year, edition, pages
Wiley-VCH Verlag Berlin , 2011. Vol. 208, no 9, 2182-2185 p.
Keyword [en]
carbon, cathodoluminescence, GaN, MOCVD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-71555DOI: 10.1002/pssa.201127135ISI: 000295433600030OAI: oai:DiVA.org:liu-71555DiVA: diva2:450521
Available from: 2011-10-21 Created: 2011-10-21 Last updated: 2012-01-09

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Kakanakova-Georgieva, AneliaForsberg, UrbanJanzén, Erik

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  • apa
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