Carbon-tuned cathodoluminescence of semi-insulating GaN
2011 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 208, no 9, 2182-2185 p.Article in journal (Refereed) Published
We report on the cathodoluminescence (CL) of nominally undoped semi-insulating GaN layers grown by hot-wall metal-organic chemical vapor deposition (MOCVD) at a threefold increase of the growth rate limited by the TMGa flow. The growth kinetics is such, that C is the only background impurity in the layers with controllably increasing concentration from 5 x 10(16) to 6 x 10(17) cm(-3), while other background impurities, H. O and Si, are essentially at the SIMS detection levels. The hot-wall MOCVD is not an ordinary approach to GaN growth process and this study corroborates a more perceptive outlook on the C incorporation in GaN and any potential C-incorporation-mediated luminescence, including the observed here blue luminescence (BL) at similar to 417 nm, and the yellow luminescence (YL) with shifting peak position towards shorter wavelengths, similar to 555-543-525 nm.
Place, publisher, year, edition, pages
Wiley-VCH Verlag Berlin , 2011. Vol. 208, no 9, 2182-2185 p.
carbon, cathodoluminescence, GaN, MOCVD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71555DOI: 10.1002/pssa.201127135ISI: 000295433600030OAI: oai:DiVA.org:liu-71555DiVA: diva2:450521