A Static Model for Electrolyte-Gated Organic Field-Effect Transistors
2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 10, 3574-3582 p.Article in journal (Refereed) Published
We present a dc model to simulate the static performance of electrolyte-gated organic field-effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed fromvoltage-dependent electric-doublelayer capacitance. The voltage-dependent contact effect and short-channel effect are also taken into account in this model. A straightforward and efficient methodology is presented to extract the model parameters. The versatility of this model is discussed as well. The model is verified by the good agreement between simulation and experimental data.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2011. Vol. 58, no 10, 3574-3582 p.
Electric-double-layer capacitance, field-effect transistors, parameter extraction, polymer electrolyte, static model
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71549DOI: 10.1109/TED.2011.2162648ISI: 000295100300045OAI: oai:DiVA.org:liu-71549DiVA: diva2:450533
Funding Agencies|Center of Organic Electronics, Linkoping University, Sweden||Strategic Research Foundation SSF||2011-10-212011-10-212016-06-13