Epitaxial growth and electrical-transport properties of Ti(7)Si(2)C(5) thin films synthesized by reactive sputter-deposition
2011 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 65, no 9, 811-814 p.Article in journal (Refereed) Published
Epitaxial predominantly phase-pure Ti(7)Si(2)C(5) thin films were grown onto Al(2)O(3)(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is similar to 60.2 angstrom; the Ti(7)Si(2)C(5) unit cell comprises alternating Ti(3)SiC(2)-like and Ti(4)SiC(3)-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti(7)Si(2)C(5) relative to Ti(3)SiC(2) and Ti(4)SiC(3) is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of similar to 45 mu Omega cm.
Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 65, no 9, 811-814 p.
Ti(3)SiC(2), Sputtering, Transmission electron microscopy (TEM), Electrical resistivity/conductivity, X-ray diffraction (XRD)
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71773DOI: 10.1016/j.scriptamat.2011.07.038ISI: 000295765300017OAI: oai:DiVA.org:liu-71773DiVA: diva2:453960
Funding Agencies|European Research Council||Swedish Research Council||Swedish Foundation for Strategic Research||NSF|08214060960003|2011-11-042011-11-042015-01-13