liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Epitaxial growth and electrical-transport properties of Ti(7)Si(2)C(5) thin films synthesized by reactive sputter-deposition
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Rowan University.
Rowan University.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2011 (English)In: Scripta Materialia, ISSN 1359-6462, E-ISSN 1872-8456, Vol. 65, no 9, 811-814 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial predominantly phase-pure Ti(7)Si(2)C(5) thin films were grown onto Al(2)O(3)(0 0 0 1) by reactive magnetron sputtering. The c-axis lattice constant is similar to 60.2 angstrom; the Ti(7)Si(2)C(5) unit cell comprises alternating Ti(3)SiC(2)-like and Ti(4)SiC(3)-like half-unit-cell stacking repeated three times. Elastic recoil detection analysis showed a few percent of nitrogen in the films from the acetylene gas used. The nitrogen-induced stabilization mechanism for Ti(7)Si(2)C(5) relative to Ti(3)SiC(2) and Ti(4)SiC(3) is discussed. Electrical-transport measurements showed metallic temperature dependence and a room-temperature resistivity of similar to 45 mu Omega cm.

Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 65, no 9, 811-814 p.
Keyword [en]
Ti(3)SiC(2), Sputtering, Transmission electron microscopy (TEM), Electrical resistivity/conductivity, X-ray diffraction (XRD)
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-71773DOI: 10.1016/j.scriptamat.2011.07.038ISI: 000295765300017OAI: oai:DiVA.org:liu-71773DiVA: diva2:453960
Note
Funding Agencies|European Research Council||Swedish Research Council||Swedish Foundation for Strategic Research||NSF|08214060960003|Available from: 2011-11-04 Created: 2011-11-04 Last updated: 2017-12-08

Open Access in DiVA

fulltext(977 kB)727 downloads
File information
File name FULLTEXT01.pdfFile size 977 kBChecksum SHA-512
86267b046c57dc6cfb818fd4e841399c0247e5d627ae99c6360a843048a2313c5c143019cc98943450d06278e14ee8d336ad9a6a2d08ba2e26c71c34367f1a6b
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Lu, JunHultman, LarsJensen, JensEklund, Per

Search in DiVA

By author/editor
Lu, JunHultman, LarsJensen, JensEklund, Per
By organisation
Thin Film PhysicsThe Institute of Technology
In the same journal
Scripta Materialia
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 727 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 284 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf