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Atomic Layer Deposition of Ruthenium Films on Strontium Titanate
University of Helsinki.
University of Helsinki.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
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2011 (English)In: Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, E-ISSN 1533-4899, Vol. 11, no 9, 8378-8382 p.Article in journal (Refereed) Published
Abstract [en]

Atomic layer deposition of ruthenium on SrTiO(3) layers was investigated using (C(2)H(5)C(5)H(4)) center dot (NC(4)H(4))Ru and air as precursors. For comparison, the growth was studied also on ZrO(2) films and SiO(2)/Si surfaces. Deposition temperature was 325 degrees C. Using rather short but intense air pulses, smooth and uniform Ru films were deposited on SrTiO(3). The films were crystallized at early stages of the growth. The nucleation density and rate on SrTiO(3) were notably lower compared to that on ZrO(2) and SiO(2), but the physical qualities including the film conductivity were considerably enhanced after reaching Ru film thickness around 10 nm.

Place, publisher, year, edition, pages
American Scientific Publishers , 2011. Vol. 11, no 9, 8378-8382 p.
Keyword [en]
Atomic Layer Deposition, Ruthenium, Nucleation, Imaging
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-72144DOI: 10.1166/jnn.2011.5045ISI: 000296209900133PubMedID: 22097588OAI: oai:DiVA.org:liu-72144DiVA: diva2:457500
Available from: 2011-11-18 Created: 2011-11-18 Last updated: 2017-12-08

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Lu, JunHultman, Lars

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