liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Graphene, universality of the quantum Hall effect and redefinition of the SI system
National Phys Lab, England .
Bur Int Poids and Mesures.
Bur Int Poids and Mesures.
National Phys Lab, England .
Show others and affiliations
2011 (English)In: New Journal of Physics, ISSN 1367-2630, E-ISSN 1367-2630, Vol. 13, no 9, 093026- p.Article in journal (Refereed) Published
Abstract [en]

The Systeme Internationale dunites (SI) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships that link these constants to measurable quantities. Here we report the first direct comparison of the integer quantum Hall effect (QHE) in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference in the quantized resistance value within the relative standard uncertainty of our measurement of 8.6 x 10(-11), this being the most stringent test of the universality of the QHE in terms of material independence.

Place, publisher, year, edition, pages
Institute of Physics , 2011. Vol. 13, no 9, 093026- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-72665DOI: 10.1088/1367-2630/13/9/093026ISI: 000296646200001OAI: oai:DiVA.org:liu-72665DiVA: diva2:461122
Note
Funding Agencies|UK National Measurement Office (NMO)||Swedish Research Council||Foundation for Strategic Research||EU||EPSRC|EP/G041954|Science & Innovation Award|EP/G014787|SINGLE||Available from: 2011-12-02 Created: 2011-12-02 Last updated: 2017-12-08

Open Access in DiVA

fulltext(582 kB)173 downloads
File information
File name FULLTEXT01.pdfFile size 582 kBChecksum SHA-512
165a8949b04ef6c97023e1f4b0954352bf974f99e4d69492089159185006ea46fa295d3de0520c5faa1cfa1fb0fa74d09bb04fb7789c625aee13e816d64e5922
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Yakimova, Rositsa

Search in DiVA

By author/editor
Yakimova, Rositsa
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
New Journal of Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 173 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 117 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf