Size dependent biexciton binding energies in GaN quantum dots
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 25, no 251903Article in journal (Refereed) Published
Single GaN/Al(Ga)N quantum dots (QDs) have been investigated by means of microphotoluminescence. Emission spectra related to excitons and biexcitons have been identified by excitation power dependence and polarization resolved spectroscopy. All investigated dots exhibit a strong degree of linear polarization (∼90%). The biexciton binding energy scales with the dot size. However, both positive and negative binding energies are found for the studied QDs. These results imply that careful size control of III-Nitride QDs would enable the emission of correlated photons with identical frequencies from the cascade recombination of the biexciton, with potential applications in the area of quantum information processing.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2011. Vol. 25, no 251903
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73545DOI: 10.1063/1.3670040ISI: 000299031600019OAI: oai:DiVA.org:liu-73545DiVA: diva2:474253
funding agencies|Thaksin University in Thailand||Swedish Research Council (VR)||Swedish Foundation for Strategic Research (SSF)||Knut and Alice Wallenberg Foundation||2012-01-092012-01-092015-06-04