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Fluorescent SiC and its application to white light-emitting diodes
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,.
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,.
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,.
Department of Materials Science and Engineering, Meijo University, 1-501 Shiogamaguchi, Tenpaku-ku,.
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2011 (English)In: Journal of semiconductors, ISSN 1674-4926, Vol. 32, no 1, 013004-1-013004-3 p.Article in journal (Refereed) Published
Abstract [en]

Fluorescent-SiC (f-SiC), which contains donor and acceptor impurities with optimum concentrations, has high conversion efficiency from NUV to visible light caused by donor-acceptor-pair (DAP) recombination. This material can be used as a substrate for a near UV light-emitting diode (LED) stack, and leads to monolithic white LED device with suitable spectral property for general lighting applications. In this paper, we describe basic technologies of the white LED, such as optical properties of f-SiC substrate, and epitaxial growth of NUV stack on the f-SiC substrate.

Place, publisher, year, edition, pages
2011. Vol. 32, no 1, 013004-1-013004-3 p.
Keyword [en]
white LED; phosphor; SiC; donor-acceptor-pair; GaN; general lighting
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73573DOI: 10.1088/1674-4926/32/1/013004OAI: oai:DiVA.org:liu-73573DiVA: diva2:474646
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2012-01-17

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Syväjärvi, MikaelYakimova, Rositsa

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