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Effect of graphene/4H-SiC(0 0 0 1) interface on electrostatic properties in graphene
CNR-IMM, Stradale primosole, Catania, Italy.
CNR-IMM, Stradale primosole, Catania, Italy.
CNR-IMM, Stradale primosole, Catania, Italy.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 44, no 6, 993-996 p.Article in journal (Refereed) Published
Abstract [en]

Electrostatic properties, quantum capacitance (Cq) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for comparative study, viz., graphene exfoliated and deposited on 4H-SiC(0 0 0 1)—DG, and graphene grown epitaxially on 4H-SiC(0 0 0 1)—EG. We observed a distinctly lower screening length (rscr) and Cq while wider variations in the LDOS for EG. Such differences are attributed to the peculiar interface between EG/4H-SiC(0 0 0 1), which is known to be more or less defective having the presence of positive charges.

Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 44, no 6, 993-996 p.
Keyword [en]
Graphene/4H-SiC(0 0 0 1) interface;Scanning Capacitance Spectroscopy; Quantum capacitance
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73574DOI: 10.1016/j.physe.2011.01.002ISI: 000305104600018OAI: oai:DiVA.org:liu-73574DiVA: diva2:474674
Conference
European Materials Research Symposium on Science and Technology of Nanotubes, Nanowires and Graphene (EMRS), 7-11 June 2010, Strasbourg, France
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2017-12-08Bibliographically approved

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Yakimova, Rositsa

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