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Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC
Université Montpellier 2 and CNRS, France.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Université Montpellier 2 and CNRS, France .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Journal of Luminescence, ISSN 0022-2313, E-ISSN 1872-7883, Vol. 132, no 1, 122-127 p.Article in journal (Refereed) Published
Abstract [en]

We report on a comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars (HNPs) and the seeding layer grown on the off-axis 4H-SiC substrate. Transmission electron microscope (TEM) results establish that a thin seeding layer continuously covers the terraces of 4H-SiC prior to the growth of ZnO HNPs. Low temperature photoluminescence (LTPL) shows that ZnO HNPs are only dominated by strong donor bound exciton emissions without any deep level emissions. Micro-LTPL mapping demonstrates that this is specific also for the seeding layer. To further understand the recombination mechanisms, time-resolved micro-PL spectra (micro-TRPL) have been collected at 5 K and identical bi-exponential decays have been found on both the HNPs and seeding layer. Temperature-dependent TRPL indicates that the decay time of donor bound exciton is mainly determined by the contributions of non-radiative recombinations. This could be explained by the TEM observation of the non-radiative defects in both the seeding layer and HNPs, like domain boundaries and dislocations, generated at the ZnO/SiC interface due to biaxial strain.

Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 132, no 1, 122-127 p.
Keyword [en]
ZnO nanopillars, Micro-photoluminescence, Time-resolved PL
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-73577DOI: 10.1016/j.jlumin.2011.08.015ISI: 000302662600024OAI: oai:DiVA.org:liu-73577DiVA: diva2:474700
Note

funding agencies|EU| MRTN-CT-2006-035735 |Swedish Research Council||

Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2017-12-08Bibliographically approved

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Sun, Jianwu W.Khranovskyy, VolodymyrEriksson, MartinSyväjärvi, MikaelYazdi, GholamrezaHoltz, Per-OlofBergman, PederHultman, LarsYakimova, Rositsa

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Sun, Jianwu W.Khranovskyy, VolodymyrEriksson, MartinSyväjärvi, MikaelYazdi, GholamrezaHoltz, Per-OlofBergman, PederHultman, LarsYakimova, Rositsa
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Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
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Journal of Luminescence
Condensed Matter Physics

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