Donor-acceptor-pair emission characterization in N-B doped fluorescent in SiC
2011 (English)In: Optical Materials Express, ISSN 2159-3930, Vol. 1, no 8, 1439-1446 p.Article in journal (Refereed) Published
In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.
Place, publisher, year, edition, pages
Optical Society of America , 2011. Vol. 1, no 8, 1439-1446 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73580DOI: 10.1364/OME.1.001439ISI: 000299050200006OAI: oai:DiVA.org:liu-73580DiVA: diva2:474703
funding agencies|Danish councils for strategic research funding| 09-072118 |Agency for Science, Technology and Innovation| 09-065038 |Swedish Energy Agency, Nordic Energy Research, Swedish Research Council| 2009-5307 |Department of the New Energy and Industrial Technology Development Organization||2012-01-092012-01-092014-10-15