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Donor-acceptor-pair emission characterization in N-B doped fluorescent in SiC
Technical University of Denmark, Lyngby.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Meijo University, Nagoya.
Technical University of Denmark, Lyngby.
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2011 (English)In: Optical Materials Express, ISSN 2159-3930, Vol. 1, no 8, 1439-1446 p.Article in journal (Refereed) Published
Abstract [en]

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018cm−3 the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6x1018cm−3. Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

Place, publisher, year, edition, pages
Optical Society of America , 2011. Vol. 1, no 8, 1439-1446 p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-73580DOI: 10.1364/OME.1.001439ISI: 000299050200006OAI: diva2:474703

funding agencies|Danish councils for strategic research funding| 09-072118 |Agency for Science, Technology and Innovation| 09-065038 |Swedish Energy Agency, Nordic Energy Research, Swedish Research Council| 2009-5307 |Department of the New Energy and Industrial Technology Development Organization||

Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2014-10-15

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Jokubavicius, ValdasYakimova, RositsaSyväjärvi, Mikael
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