Silicon in AlN: shallow donorand DX behaviors
2011 (English)In: physica status solidi (c)P hys. Status Solidi C 8, No. 7–8, 2167–2169 (2011) / DOI 10.1002/pssc.201001030, 2011, Vol. 8, no 7-8, 2167-2169 p.Conference paper (Refereed)
In unintentionally Si-doped AlN bulk samples, an electron paramagnetic resonance (EPR) spectrum with characteristics of a shallow donor, previously assigned to the shallow Si donor, was observed at room temperature in darkness. Temperature dependent studies of the EPR signal showed that Si is a DX center in AlN. However, with the negatively charged DX– state determined to be only ∼78 meV below the neutral shallow donor state, Si should behave as a shallow dopant in AlN at normal device operating temperatures.
Place, publisher, year, edition, pages
2011. Vol. 8, no 7-8, 2167-2169 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73584DOI: 10.1002/pssc.201001030OAI: oai:DiVA.org:liu-73584DiVA: diva2:474715