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Polarized emission and excitonic fine structure energies of InGaN quantum dots
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan.
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2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 407, no 10, 1553-1555 p.Article in journal (Refereed) Published
Abstract [en]

The linear polarization of the excitonic emission from quantum dot-like potential minima formed in a thin InGaN layer is investigated. The recorded emission lines exhibit significant intensity linearly polarized along the wurtize c-axis. For many of the studied spectra, the excitonic fine-structures were resolved, revealing energy splittings in the order of ∼200 μeV.

Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 407, no 10, 1553-1555 p.
Keyword [en]
Exciton fine structure quantum dot
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73585DOI: 10.1016/j.physb.2011.09.084ISI: 000303149600025OAI: oai:DiVA.org:liu-73585DiVA: diva2:474717
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2017-12-08

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Karlsson, K. FredrikSupaluck, AmloyHoltz, Per-Olof

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