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Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 75-78, Trans Tech Publications Inc., 2011, 75-78 p.Conference paper, Published paper (Refereed)
Abstract [en]

A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely single-domain material of very high purity and of excellent electrical characteristics. A growth rate of up to 10 μm/h and a low background doping enable deposition of epitaxial layers suitable for MOSFET devices.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 75-78 p.
Keyword [en]
epitaxial growth, chloride-based CVD, on-axis, 3C-SiC
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73587DOI: 10.4028/www.scientific.net/MSF.679-680.75OAI: oai:DiVA.org:liu-73587DiVA: diva2:474756
Conference
ECSCRM 2010, Oslo, Norway
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2014-10-08

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fulltext(665 kB)471 downloads
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Henry, AnneLeone, StefanoBeyer, Franziska C.Andersson, SvenKordina, OlleJanzén, Erik

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