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Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 59-62, Trans Tech Publications Inc., 2011, 59-62 p.Conference paper, Published paper (Refereed)
Abstract [en]

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 59-62 p.
Keyword [en]
Chloride-Based CVD, Epitaxial Growth, High Growth Rate, On-Axis
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73600DOI: 10.4028/www.scientific.net/MSF.679-680.59OAI: oai:DiVA.org:liu-73600DiVA: diva2:474851
Conference
ECSCRM2010, Oslo, Norway
Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2015-03-11

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Leone, StefanoBeyer, Franziska C.Andersson, SvenPedersen, HenrikKordina, OlleHenry, AnneJanzén, Erik

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Leone, StefanoBeyer, Franziska C.Andersson, SvenPedersen, HenrikKordina, OlleHenry, AnneJanzén, Erik
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Semiconductor MaterialsThe Institute of Technology
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