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Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 249-252, Trans Tech Publications Inc., 2011, 249-252 p.Conference paper, Published paper (Refereed)
Abstract [en]

DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 249-252 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 679-680
Keyword [en]
Bistability, DLTS, Electron Irradiation, Metastable Defect
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73602OAI: oai:DiVA.org:liu-73602DiVA: diva2:474868
Conference
ECSCRM2010, Oslo, Norway
Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2015-09-22

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Beyer, FranziskaHemmingsson, CarlPedersen, HenrikHenry, AnneJanzén, Erik

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