Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC
2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 249-252, Trans Tech Publications Inc., 2011, 249-252 p.Conference paper (Refereed)
DLTS measurements show bistable behavior of the previously reported EH5 peak in low- and high-energy electron irradiation 4H-SiC. Both reconfiguration processes (A ! B and B ! A) take place above 700 ±C. By isothermal annealing, the reconfiguration rates were determined and the reconfiguration energy was calculated to EA = 2.4±0.2 eV. Since the defect is present already after low-energy electron irradiation, which mainly affects the C atom in SiC, the EH5 peak may be related to defects associated with C-vacancies or C-interstitials.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 249-252 p.
, Materials Science Forum, ISSN 0255-5476 ; 679-680
Bistability, DLTS, Electron Irradiation, Metastable Defect
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73602OAI: oai:DiVA.org:liu-73602DiVA: diva2:474868
ECSCRM2010, Oslo, Norway