High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
2011 (English)In: Materials Science Forum (Volumes 679 - 680), p115-118, Trans Tech Publications Inc., 2011, 115-118 p.Conference paper (Refereed)
The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 115-118 p.
aphene, High Growth Rate, High Power Device, On-Axis Epitaxilal Growth, Surface Morphology
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73607DOI: 10.4028/www.scientific.net/MSF.679-680.115OAI: oai:DiVA.org:liu-73607DiVA: diva2:474893
ECSCRM2010, Oslo, Norway