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High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)In: Materials Science Forum (Volumes 679 - 680), p115-118, Trans Tech Publications Inc., 2011, 115-118 p.Conference paper, Published paper (Refereed)
Abstract [en]

The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 115-118 p.
Keyword [en]
aphene, High Growth Rate, High Power Device, On-Axis Epitaxilal Growth, Surface Morphology
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73607DOI: 10.4028/www.scientific.net/MSF.679-680.115OAI: oai:DiVA.org:liu-73607DiVA: diva2:474893
Conference
ECSCRM2010, Oslo, Norway
Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2014-10-08

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ul-Hassan, JawadBergman, PederHenry, AnneJanzén, Erik

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