liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
Department of Electronic Engineering, NED University of Engineering and Technology, 75270, Karachi, Pakistan.
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Science and Technology. Linköping University, The Institute of Technology.
Show others and affiliations
2011 (English)In: Advanced Materials Research Vol. 324 (2011) pp 233-236, Trans Tech Publications Inc., 2011, 233-236 p.Conference paper (Refereed)
Abstract [en]

The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 oC in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 233-236 p.
Keyword [en]
nealing, Optical Property, ZnO Nanorod, ZnO/Si Heterojunction
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-73608DOI: 10.4028/ diva2:474912
Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2014-10-08

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Henry, AnneNur, OmerWillander, MagnusUl Wahab, Qamar
By organisation
Department of Science and TechnologyThe Institute of TechnologySemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 77 hits
ReferencesLink to record
Permanent link

Direct link