Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
2011 (English)In: Advanced Materials Research Vol. 324 (2011) pp 233-236, Trans Tech Publications Inc., 2011, 233-236 p.Conference paper (Refereed)
The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 oC in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 233-236 p.
nealing, Optical Property, ZnO Nanorod, ZnO/Si Heterojunction
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73608DOI: 10.4028/www.scientific.net/AMR.324.233OAI: oai:DiVA.org:liu-73608DiVA: diva2:474912