Effects of source material on epitaxial growth of fluorescent SiC
2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 522, 7-10 p.Article in journal (Refereed) Published
The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 μm/h, 170 μm/h and 200 μm/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials.
Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 522, 7-10 p.
Sublimation growth; Fluorescence; Photoluminescence; Silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-73709DOI: 10.1016/j.tsf.2011.10.176ISI: 000310782000003OAI: oai:DiVA.org:liu-73709DiVA: diva2:476177