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Development of FETs based on epitaxially grown single layer graphene on SiC for highly sensitive gas detection
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
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2011 (English)In: Proceedings of the International Conference on Silicon Carbide and Related materials, 2011, 405- p.Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2011. 405- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-73846OAI: oai:DiVA.org:liu-73846DiVA: diva2:477940
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ICSCRM2011
Available from: 2012-01-14 Created: 2012-01-14 Last updated: 2016-08-31

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Pearce, RuthYakimova, RositzaHultman, LarsAndersson, MikeLloyd Spetz, Anita

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Pearce, RuthYakimova, RositzaHultman, LarsAndersson, MikeLloyd Spetz, Anita
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