SiC based field effect transistor for H2S detection
2011 (English)In: Proc. IEEE Sensors 2011, Limerick, Ireland, October 28-31, IEEE , 2011, 770-773 p.Conference paper (Refereed)
Experimental characterization and quantum chemical calculations were performed to evaluate the performance of a SiC based Field Effect Transistors with Pt and Ir gates as H2S sensors. The sensors were tested against various concentrations of H2S gas at the operating temperature between 150 and 350 °C. It was observed that Ir was very sensitive and selective to H2S at 350 °C. This phenomenon was studied further by comparing the reaction energy when H2S is exposed to Pt and Ir with density functional theory (DFT) calculations.
Place, publisher, year, edition, pages
IEEE , 2011. 770-773 p.
, IEEE Sensors, ISSN 1930-0395 ; 2011
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73850DOI: 10.1109/ICSENS.2011.6127411ISBN: 978-1-4244-9290-9OAI: oai:DiVA.org:liu-73850DiVA: diva2:477944
IEEE Sensors 2011, 28-31 October, Limerick, Ireland