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Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
Instituto Tecnológico e Nuclear, 2686-953 Sacavèm, Portugal.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Division of Solid State Physics, Lund University, 221 00 Lund, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 8, no 5, 1629-1632 p.Article in journal (Refereed) Published
Abstract [en]

In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.

Place, publisher, year, edition, pages
2011. Vol. 8, no 5, 1629-1632 p.
Keyword [en]
optical properties;III-V nitride semiconductors;spectroscopic ellipsometry
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73877DOI: 10.1002/pssc.201000792OAI: oai:DiVA.org:liu-73877DiVA: diva2:478164
Available from: 2012-01-16 Created: 2012-01-16 Last updated: 2017-12-08

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Darakchieva, VanyaMonemar, Bo

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