Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry
2011 (English)In: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 8, no 5, 1629-1632 p.Article in journal (Refereed) Published
In this work we study the optical properties of two high quality fifty-periods of In-polarity InN/In0.73Ga0.27N MQWs samples, grown by radio-frequency plasma-assisted molecular beam epitaxy, with different well (0.5-1 nm) and barrier thicknesses (3-4 nm). We employ spectroscopic ellipsometry at room temperature in the energy range from 0.6 to 6 eV, and incidence angles of 60 and 70°. Ellipsometric data were successfully modelled using the model dielectric function approach and a multilayer model assuming the MQWs as a homogeneous layer. The E0, A and E1 MQWs transition energies were determined and found to exhibit a blueshift with decreasing the well thickness.
Place, publisher, year, edition, pages
2011. Vol. 8, no 5, 1629-1632 p.
optical properties;III-V nitride semiconductors;spectroscopic ellipsometry
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73877DOI: 10.1002/pssc.201000792OAI: oai:DiVA.org:liu-73877DiVA: diva2:478164