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Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

Sublimation epitaxy of SiC on low off-axis substrates was performed. The growth was performed at different temperatures, mainly under vacuum conditions or with an initial atmosphere of N2 at 0.5 mbar (RT). Some additional experiments under different conditions (Ar background, higher temperature, higher off-axis substrate) were performed in order to further investigate growth influencing factors. The samples were characterized by optical microscopy and atomic force microscopy. A dependence of 3C/6H growth on substrate off-axis, as well as on temperature, was clear to be seen. Favored growth of 6H in the presence of N2 was found.  An enlargement effect on the 3C domains grown in N2 ambient was observed. Additionally a correlation between step bunching and growth rate was found in step flow growth on low off-axis substrates. Suggestions for relevant growth mechanisms are made. Further work is discussed.

Place, publisher, year, edition, pages
2011. , 49 p.
Keyword [en]
Sublimation, epitaxy, SiC, polytype
National Category
Other Materials Engineering
URN: urn:nbn:se:liu:diva-74414ISRN: LITH-IFM-A-EX--11/2555--SEOAI: diva2:484028
Subject / course
Available from: 2012-01-27 Created: 2012-01-26 Last updated: 2012-01-27Bibliographically approved

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Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.(1955 kB)224 downloads
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